Under standard conditions, germanium is a brittle, silvery-white, semi-metallic element. This form constitutes an allotrope known as α-germanium, which has a metallic luster and a diamond cubic crystal structure, the same as diamond. While in crystal form, germanium has a displacement threshold energy of . At pressures above 120 kbar, germanium becomes the allotrope β-germanium with the same structure as β-tin. Like silicon, gallium, bismuth, antimony, and water, g… http://hyperphysics.phy-astr.gsu.edu/hbase/Tables/Semgap.html

A nanomembrane-based bandgap-tunable Ge microdisk for Si …

웹2008년 11월 6일 · The band gap for the Germanium diode equals 0.753 eV and for the silicon diode equals to 1.312 eV. Introduction A diode is a semi conducting material which in its simplest form converts ac to dc ... 웹Unfortunately bulk germanium is an indirect band gap semiconductor. Here, we demonstrate that a thick germanium layer can be transformed from an indirect into a direct band gap semiconductor by using silicon nitride stressor layers. We achieve 1.75% (1.67%) biaxial tensile strain in 6 (9) μm diameter microdisks as measured from photoluminescence. crawford and bangs

Direct Band Gap Germanium Microdisks Obtained with Silicon Nitride …

웹2024년 6월 7일 · Thus semiconductors with band gaps in the infrared (e.g., Si, 1.1 eV and GaAs, 1.4 eV) appear black because they absorb all colors of visible light. Wide band gap … 웹2024년 2월 7일 · Furthermore, Ge narrow band-gap allows for efficient infra-red detection in opto-electronic devices 7,8. However, bulk Ge is mechanically softer than Si, and Ge/Si system can have residual strain ... 웹2024년 5월 26일 · Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional gap deformation potential model most widely adopted to describe this … dj chipstyler 2021